Toshiba Corporation’s Semiconductor & Storage Products Company today announced its next generation of enterprise solid state drives (eSSDs) for the PX Series. The new PX04S line features four serial-attached small computer system interface (SCSI) SAS eSSD models well-suited for enterprise applications including: mail servers; database servers; virtualized enterprise file servers; and primary storage in read, write or mixed workload environments. Continuing Toshiba’s legacy of quality and reliability, the dual-ported 12Gbit/s SAS PX04S line offers random 4K performance with read IOPS up to 270K and write IOPS up to 145K. This is Toshiba’s first 12Gbit/s SAS SSD to deliver 3.84TB of operating capacity. Sample shipment starts from today.
The PX04S line features four eSSD models – PX04SHB, PX04SMB, PX04SVB and PX04SRB – each offering a range of capacities and optimized for different applications and workloads;
0 CommentsSeagate Technology plc, a world leader in storage solutions, today announced the availability of the 1200.2 Serial Attached SCSI (SAS) Solid State Drive (SSD). The Seagate 1200.2 SAS SSD is the first product to result from a strategic alliance between Seagate and Micron Technology, Inc., announced in February 2015.
“Enterprise and cloud users face record growing storage demands challenging the performance of their IT systems to churn through mass amounts of data, while being restricted by opex/capex expenditure limits,” said Brett Pemble, vice president of flash products, Seagate cloud systems and electronics solutions. “As our partners and customers depend on Seagate flash technologies to meet these challenges, we are leveraging our collaboration and innovation with Micron to exceed their expectations.”
0 CommentsToshiba Corporation today unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world’s first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.
BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds. The new 256Gb device is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centers.
0 CommentsUnigen Corporation has announced an MLC NAND flash based 2.5” SATA III SSD solution in densities up to 1TB. This SSD solution is intended for high density storage, cloud storage, industrial, and networking applications.
The products are designed around a Multi-Format Flash Media controller, which allows read/write capability to MLC, eMLC or SLC NAND Flash, providing performance and high reliability density media to store code and data.
The solutions are based on the standard 2.5” form factor (7mm and 9mm heights), which operates on a 5V power supply. It is fully compliant with SATA III and backward compatible with SATA II.
The solutions feature a performance throughput of up to 530MB/s Read, and 500MB/s write, with typical latency lower than 100uS, and low power consumption of less than 6W active.
0 CommentsIntel Corporation and Micron Technology, Inc. today unveiled 3D XPoint technology, a non-volatile memory that has the potential to revolutionize any device, application or service that benefits from fast access to large sets of data. Now in production, 3D XPoint technology is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.
The explosion of connected devices and digital services is generating massive amounts of new data. To make this data useful, it must be stored and analyzed very quickly, creating challenges for service providers and system builders who must balance cost, power and performance trade-offs when they design memory and storage solutions. 3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.
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