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Toshiba Memory Europe GmbH has announced three new additions to the EXCERIA family of microSDXC cards, named M303. With capacities of up to 256GB, maximum read/write speeds of 98MB/s and 65MB/s respectively, as well as a new Video Speed Class 30 (V30), the M303 allows users to record and store 4K Ultra HD content.
The M303's speed rating supports 4K Ultra HD video recording; a prerequisite for the latest action cameras, video recorders and drones. Smartphones compatible with microSDXC specification will benefit from the M303's ability to write high-resolution videos and images at high speed. Rated with Video Speed Class 30 (V30), the M303 provides a minimum data transfer rate of 30 MB/s with a recommended UHS device under the conditions regulated by SD association.
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Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers and solid-state storage devices, today introduced its new FerriSSD single-chip SSDs that features PCIe Gen 3 NVMe 1.3 interface for high-performance mission critical applications. The SM689 supports PCIe Gen 3x4 interface while SM681 supports PCI Gen 3x2 interface - exhibiting sequential read speed of up to 1.45GB/s and sequential write speed of up to 650MB/s. Both products can support multiple capacity configurations ranging from 16GB to 256GB and include enterprise-grade advanced data integrity and reliability capabilities using Silicon Motion's proprietary end-to-end data protection, ECC and data caching technologies.
The SM689 and SM681 are the newest members of the FerriSSD family which includes the PATA (SM601) and SATA (SM619) solutions targeted at embedded computing applications in industrial, commercial, enterprise and automotive end-markets. FerriSSD single-chip SSDs are customizable via firmware and offer enhanced reliability and robust data integrity features that are essential for the extreme operating environments of these applications.
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As mobile content and applications grow increasingly sophisticated, Western Digital Corporation is transforming the mobile experience with new industry-leading mobile solutions designed to enable consumers to better capture, share and enjoy rich content on their devices. At Mobile World Congress, the company is releasing the world’s fastest UHS-I flash memory card, the 400GB SanDisk Extreme UHS-I microSDXC card, and demonstrating the future of flash memory card technology with Peripheral Component Interconnect Express (PCIe)-enabled cards, designed to deliver the performance required for the next wave of data and content-intensive applications.
Whether it’s exploring a new world in an immersive virtual reality app, or capturing 4K footage on a smartphone or drone, consumers can count on Western Digital to deliver even more robust mobile flash memory technology that offers them a premium experience on their favorite device.
The company’s new 400GB SanDisk Extreme UHS-I microSD card is designed to help consumers move their high-quality content faster than ever. At 160MB/s, the new card is more than 50 percent faster than current SanDisk Extreme UHS-I microSD cards. The card is able to reach this unprecedented speed by leveraging Western Digital proprietary technology. The card will also feature the A2 specification to help launch and load apps at blazing speeds.
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Addressing the needs of a growing landscape of Internet of Things (IoT) and Fast Data applications at the edge, Western Digital Corporation today announced two new NVMe SSDs – Western Digital PC SN720 and Western Digital PC SN520 – powered by a new NVMe storage architecture, scalable for a range of emerging implementations, from IoT and edge computing to mobile computing systems.
The new Western Digital NVMe client architecture and product portfolio will enable manufacturers of IoT devices, computing devices such as thin and light, 2-in-1 and embedded PCs and monitoring systems to enable the capture and transformation of the massive quantities of data in real-time at the edge of smart city, smart home and personal data environments. Cisco GCI estimates that nearly 850 zettabytes (ZB) will be generated by all people, machines and things by 2021. With the advent of high-bandwidth technologies like 5G, augmented reality and facial recognition, new applications can benefit from the exceptional performance, power efficiency and capacity of NVMe and Western Digital 3D NAND to deliver an optimal user experience.
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Sonnet Technologies today announced that the new 1TB version of its popular Fusion Thunderbolt 3 PCIe Flash Drive is now shipping. A rugged, pocket-size solid-state drive (SSD) storage device with a Thunderbolt 3 interface, the Mac- and Windows-compatible drive is equipped with 1TB of NVMe flash storage and leverages the 40Gb/s bandwidth of Thunderbolt 3 to deliver data transfer speeds up to 2600 MB/s.
The Fusion Thunderbolt 3 PCIe Flash Drive was designed for pro users requiring ultimate performance in a truly portable storage device, unencumbered by the need for an AC power adapter. The storage device connects to any compatible Mac or Windows computer, or at the end of a Thunderbolt 3 device daisy chain, with its 0.5-meter Thunderbolt 3 (40Gbps) cable. Based on the latest PCIe Gen 3 flash memory technology, the Fusion Thunderbolt 3 PCIe Flash Drive is more than five times faster than 6Gb/s SATA SSDs and USB 3 SSD drives.
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) – the PM1643 – for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36TB high-capacity lineup introduced in March 2016.
This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512Gb V-NAND chips. These super-dense 1TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.
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In 2017, Intel brought to market a wide array of products designed to tackle the world’s growing stockpile of data. Intel CEO Brian Krzanich called data an “unseen driving force behind the next-generation technology revolution,” and Rob Crooke, senior vice president and general manager of the Non-Volatile Memory (NVM) Solutions Group at Intel, recently outlined his vision for how storage and memory technologies can address all that data. In the past year, Intel introduced new Intel® Optane™ technology-based products and will continue to deliver exciting, blazing-fast solutions based on this breakthrough technology, with announcements later this year. Intel also brought industry-leading areal density to storage for consumers and enterprises, driving both capacity and form factor innovation with Intel® 3D NAND storage products.
Intel is reimagining how data is stored for the data center. By driving the creation and adoption of compelling new form factors, like the EDSFF 1U long and 1U short, and delivering advanced materials, including our densest NAND to date with 64-layer TLC Intel 3D NAND, Intel is enabling capacities of 8TB and beyond in an array of form factors that meet the specific performance needs of data centers.
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Silicon Power (SP), a leader in performance memory solutions, today released the P32A80 and P32A85 PCIe Solid State Drives, a pair of leading high-performance and long-lasting devices in an already robust pool of SSDs.
For the New Creators Starting Out
The highly functional P32A80 and P32A85 are the ideal SSD solutions for high-end systems that are ready for a new level of performance and responsiveness. SP launches its first ever PCIe SSD, with designers in mind looking for large image rendering and intensive graphic editing capabilities, enterprises demanding high speed file transfer, fast boot-ups, and launches, and also musicians needing high volume recording and music library loading performance. Calvin Ho, one of Silicon Power’s Product Managers adds:
“We’re setting ourselves up to be the leading expert in PCIe trends and to deliver the most excellent performance and quality choice for our channel partners and customers who enjoy cutting-edge technology toys.”
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of a 256-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution with advanced features based on automotive specifications from the JEDEC UFS 3.0 standard, for the first time in the industry.
Following the memory breakthrough of the automotive industry’s first 128GB eUFS in September, 2017, Samsung’s automotive 256GB eUFS is now being shipped to automotive manufacturers preparing the market for Advanced Driver Assistance Systems (ADAS), next-generation infotainment systems and new-age dashboards in luxury vehicles.
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ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, today launches the ISMS331, an industrial SATA 7-pin Disk-On-Module (DOM), which is suitable for desktops, compact computers, industrial computers and embedded applications by providing various specifications and wide temperature support. It also features several key technologies, including self-diagnostics, life time monitoring and ECC (Error Correcting Code) for product longevity and high reliability.
Various Upgrade Configurations for More Possibilities
The ADATA ISMS331 SATA 7-pin DOM utilizes high-quality SLC and MLC NAND flash and comes with a variety of capacities from 4GB to 32GB (SLC models) and 8GB to 128GB (MLC models). It is available in both horizontal and vertical pin orientations to accommodate a wide variety of system form factors. In addition, it provides excellent performance and reliability with sequential read/write speeds of up to 260MB/s for SLC models and 300/180MB/s for MLC models. Thanks to the industrial grade operable temperature range of -40°C to +90°C, the ISMS331 can operate in harsh environments for long periods of time.
