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Innodisk, a designer and manufacturer of SSDs for commercial and industrial applications, announces a release of the industrial-embedded industry's first SATA device in accordance to SATA µSSD standards – nanoSSD.
Through the integration of a control chip, flash memory and peripheral power components into a single ball grid array (BGA) package, Innodisk has managed to reduce the size of the nanoSSD to approximately 1% the size of a 2.5” SSD. With dimensions of only 16 x 20 x 2 mm (WxLxH), a weight of only 1.5g, SATA III support, capacities ranging from 4 to 64 GB and both x86 and ARM compatibility, nanoSSD can be incorporated into a wide variety of applications where a small form-factor and high transfer rates are important, including industrial mobile devices, embedded systems, tablets, high-end smart phones and Ultrabooks.
Innodisk's nanoSSD not only offers the advantage of an incredibly small form factor, as a result of the integration of DRAM into a BGA, this product also features high read/write speeds of 480/175 MB/s, respectively. Whether for purposes of system booting, data storage, or data cache backup, nanoSSD can significantly improve overall system performance.
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SanDisk Corporation, a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology.
SanDisk’s achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.
SanDisk’s second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk’s three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.
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OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced that its 100GB SATA III enterprise-class Deneva 2 SSDs are now qualified on NETGEAR® ReadyDATA™ 516 networked-attached storage devices. Announced on May 7, 2013, the ReadyDATA 516 is a 6-bay desktop NAS device designed specifically for small and medium-sized businesses (SMBs) without a data center or for branch offices requiring powerful on-site storage capabilities. Delivering complete ‘data center storage in a box’ functionality, NETGEAR’s ReadyDATA 516 enables simplified storage at a price that is cost-effective for even the smallest business sites.
The ability to provide simplified, cost-efficient storage for business customers through a high-performance, enterprise-class, SATA III flash-based drive was a priority for NETGEAR in their selection of OCZ’s Deneva 2 SSDs. SMBs looking to meet capacity requirements and boost performance require advanced features, like ReadyDATA’s SSD caching, which automatically copies frequently accessed data to SSDs. The high-performing Deneva 2 drives are ideally suited for the ReadyDATA 516 platform delivering up to 80,000 IOPS performance (random 4K writes), a maximum throughput up to 550 MB/s with support for 100GB capacities in a 2.5-inch eMLC NAND format. Providing power loss data protection, strong error correction for enhanced data integrity and data fail recovery provides the superior endurance and reliability that ReadyDATA 516 customers require.
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Toshiba Corporation and Toshiba America Electronic Components, Inc., (TAEC), a committed leader that collaborates with technology companies to create breakthrough designs, today announced that the company has developed second generation 19 nanometer process technology that it will apply to mass production of 2-bit-per-cell 64 gigabit NAND memory chips later this month.
Toshiba has used the new generation technology to develop the world's smallest 2-bit –per-cell 64 gigabit NAND memory chips, with an area of only 94 square millimeters. Using a unique high speed writing method, the next generation chips can achieve a write speed of up to 25 megabytes a second - the world's fastest class in 2-bit-per-cell chips.
Toshiba is also developing 3-bit-per-cell chips by using this process technology and aims to start mass production in the second quarter of this fiscal year. The company will initially introduce 3-bit, multi-level-cell products for smartphones and tablets by developing a controller compatible with eMMC, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is now supplying its solid state drive (SSD), the SM843T, for use in high-performance servers and storage in next-generation data centers, including Big Data systems.
“Samsung Green SSD products are widely acknowledged for their superior performance and quality design having contributed to data center system improvements and operational cost savings,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “In response to customer demand, we are accelerating the growth of the flash storage market with new SSD offerings this year like the SM843T, while reinforcing our competitive edge in next-generation SSD products and solutions.”
The SM843T strengthens Samsung’s SATA interface enterprise SSD product lineup. Offering up to 960 gigabytes (GB) of memory storage for faster and more efficient Big Data systems and cloud computing environments, the SM843T offers the industry’s most advanced performance level for SATA 6.0 SSDs.
