- Details
- Flash Memory
Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., the independent world leader in memory products, today announced the latest addition to its SSDNow family, the KC300 solclass-state drive. KC300 enables business, mobile and power users to be more productive as the drive maximizes power efficiencies in notebook PCs. KC300 provclasses advanced power management via an LSI® SandForce® second-generation SF-2281 processor, allowing users to do more from a single charge.
KC300 is the next-generation business drive, replacing the Kingston® V+200 and KC100 SSDs. The drive features enterprise-grade SMART attributes, allowing IT departments to monitor wear range data, SSD life left, write amplification and total bytes written. KC300 comes equipped with Data Integrity Protection featuring DuraWrite™ technology to extend the life of the SSD by effectively and efficiently reducing the number of Flash writes via an intelligent compression engine without sacrificing data integrity. RAISE™ reduces the number of uncorrectable errors in the drive, over and above standard error code correction.
- Details
- Flash Memory
Plextor, a leading developer of high-performance digital storage technology, will preview the next generation of SSD (solid-state drive). In addition to multi-award winning consumer SSDs and specialized solutions for industry and enterprise, the Plextor booth will house the first 1Y-nm flash based SSD.
The industry and enterprise products on display include the tiny eMMC, mSATA SSDs, and NGFF SSDs, and a 2.5-inch ultra-high endurance SLC SSDs. An extreme temperature resistant power protected MLC SSD will also be shown as a sample of the advanced, customized solutions available from Plextor. This drive is capable of delivering random maximum read/write speeds of 94,000/81,000 IOPS at temperatures between -40 and +85°C. The SSD utilizes tantalum capacitors to prevent data loss in the case of power interruption.
Consumer products on display include the multi-award winning 100K IOPS capable M5 Pro Xtreme, entry-level M5S, and the new M5M mSATA SSD. Further details of the 1Y-nm flash based SSD also on display will be released later.
- Details
- Flash Memory
Silicon Power, the world’s leading provider of memory storage solutions presents you with a newly designed USB flash drive – Jewel J10. Combined with high technology and sleek design, the Jewel J10 enables you to show your extraordinary taste anytime and anywhere. This Northern Europe inspired design is not just another ordinary memory storage device but also a luxurious accessory which allows you to express yourself.
SP Jewel J10 will catch your eye with its stainless steel design and remarkable appearance, making itself a perfect combination of style and practicability. With the weight of 3.1g, J10 will amaze you with its mobility and convenience. Accompanied with advanced application of USB3.0 COB (Chip on Board), Jewel J10 is able to not only protect the golden finger from scratches but also prevent itself from damages caused by water, dust and vibration. Furthermore, the creative groove design ensures that your USB is only a keychain away.
- Details
- Flash Memory
Verbatim, a global pioneer of electronic data storage technology including optical media and flash memory, has expanded its popular and highly rated V3 Store’n’Go USB drive range with a product line offering faster connection and data transfer speeds. The V3 MAX delivers the fastest speed of any Verbatim USB drive.
With USB 3.0 connectivity that is backwards compatible with USB 2.0 ports, the V3 Max has a very impressive read speed of up to 175MB/sec and a write speed of up to 80MB/sec. It is available in storage capacities of 16GB, 32GB, 64GB and 128GB.
The V3 Max’s sleek appearance is boosted by a UV protective coating on its highly polished case to add further protection against scratches and marks from everyday wear and tear.
- Details
- Flash Memory
OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced the release of the Vertex 450 SATA III SSD Series featuring the company’s proprietary Indilinx Barefoot 3 M10 Series controller. As part of the leading-edge Vertex series, Vertex 450 lives up to its name and bridges the gap between high performance and mainstream solid-state storage. With advanced storage performance, reliability, and quality, the Vertex 450 utilizes 20nm process geometry NAND flash to meet the needs of today’s high-end consumer and client applications.
“As one of the industry’s most highly awarded SSD Series to date, the Vertex name has become synonymous with the latest and greatest in flash-based storage providing an exceptional balance of performance and cost efficiency,” said Daryl Lang, Senior Vice President of Product Management for OCZ Technology. “The Vertex 450 marks the first time this popular OCZ series utilizes in-house ASIC technology delivering an even greater level of speed, reliability and value for our customers.”
- Details
- Flash Memory
Innodisk, a designer and manufacturer of SSDs for commercial and industrial applications, announces a release of the industrial-embedded industry's first SATA device in accordance to SATA µSSD standards – nanoSSD.
Through the integration of a control chip, flash memory and peripheral power components into a single ball grid array (BGA) package, Innodisk has managed to reduce the size of the nanoSSD to approximately 1% the size of a 2.5” SSD. With dimensions of only 16 x 20 x 2 mm (WxLxH), a weight of only 1.5g, SATA III support, capacities ranging from 4 to 64 GB and both x86 and ARM compatibility, nanoSSD can be incorporated into a wide variety of applications where a small form-factor and high transfer rates are important, including industrial mobile devices, embedded systems, tablets, high-end smart phones and Ultrabooks.
Innodisk's nanoSSD not only offers the advantage of an incredibly small form factor, as a result of the integration of DRAM into a BGA, this product also features high read/write speeds of 480/175 MB/s, respectively. Whether for purposes of system booting, data storage, or data cache backup, nanoSSD can significantly improve overall system performance.
- Details
- Flash Memory
SanDisk Corporation, a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology.
SanDisk’s achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.
SanDisk’s second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk’s three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.
- Details
- Flash Memory
Toshiba Corporation and Toshiba America Electronic Components, Inc., (TAEC), a committed leader that collaborates with technology companies to create breakthrough designs, today announced that the company has developed second generation 19 nanometer process technology that it will apply to mass production of 2-bit-per-cell 64 gigabit NAND memory chips later this month.
Toshiba has used the new generation technology to develop the world's smallest 2-bit –per-cell 64 gigabit NAND memory chips, with an area of only 94 square millimeters. Using a unique high speed writing method, the next generation chips can achieve a write speed of up to 25 megabytes a second - the world's fastest class in 2-bit-per-cell chips.
Toshiba is also developing 3-bit-per-cell chips by using this process technology and aims to start mass production in the second quarter of this fiscal year. The company will initially introduce 3-bit, multi-level-cell products for smartphones and tablets by developing a controller compatible with eMMC, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).
- Details
- Flash Memory
OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced that its 100GB SATA III enterprise-class Deneva 2 SSDs are now qualified on NETGEAR® ReadyDATA™ 516 networked-attached storage devices. Announced on May 7, 2013, the ReadyDATA 516 is a 6-bay desktop NAS device designed specifically for small and medium-sized businesses (SMBs) without a data center or for branch offices requiring powerful on-site storage capabilities. Delivering complete ‘data center storage in a box’ functionality, NETGEAR’s ReadyDATA 516 enables simplified storage at a price that is cost-effective for even the smallest business sites.
The ability to provide simplified, cost-efficient storage for business customers through a high-performance, enterprise-class, SATA III flash-based drive was a priority for NETGEAR in their selection of OCZ’s Deneva 2 SSDs. SMBs looking to meet capacity requirements and boost performance require advanced features, like ReadyDATA’s SSD caching, which automatically copies frequently accessed data to SSDs. The high-performing Deneva 2 drives are ideally suited for the ReadyDATA 516 platform delivering up to 80,000 IOPS performance (random 4K writes), a maximum throughput up to 550 MB/s with support for 100GB capacities in a 2.5-inch eMLC NAND format. Providing power loss data protection, strong error correction for enhanced data integrity and data fail recovery provides the superior endurance and reliability that ReadyDATA 516 customers require.
- Details
- Flash Memory
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is now supplying its solid state drive (SSD), the SM843T, for use in high-performance servers and storage in next-generation data centers, including Big Data systems.
“Samsung Green SSD products are widely acknowledged for their superior performance and quality design having contributed to data center system improvements and operational cost savings,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “In response to customer demand, we are accelerating the growth of the flash storage market with new SSD offerings this year like the SM843T, while reinforcing our competitive edge in next-generation SSD products and solutions.”
The SM843T strengthens Samsung’s SATA interface enterprise SSD product lineup. Offering up to 960 gigabytes (GB) of memory storage for faster and more efficient Big Data systems and cloud computing environments, the SM843T offers the industry’s most advanced performance level for SATA 6.0 SSDs.
