SK hynix Unveils The Industry’s Most Multilayered 176-Layer 4D NAND Flash
SK hynix Inc. announced the completion of developing the industry’s most multilayered 176-layer 512 Gigabit (Gb) Triple-Level Cell (TLC) 4D NAND flash. The Company provided the samples to controller companies last month to make a solution product.
SK hynix has been promoting 4D technology from the 96-layer NAND flash products that combine Charge Trap Flash (CTF) with high-integrated Peri. Under Cell (PUC) technology. The new 176-layer NAND flash is the third generation 4D product that secures the industry’s best number of chips per wafer. This allows the bit productivity to be improved by 35% compared to the previous generation with the differentiated cost competitiveness. The read speed of cell increased by 20% over the previous generation adopting 2-division cell array selection technology. The data transfer speed also has been improved by 33% to 1.6Gbps adopting speed-up technology without increasing the number of processes.
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