MIcron Unveils New Memory And Storage Innovations At Computex 2021
Micron Technology, Inc., today unveiled memory and storage innovations across its portfolio based on its industry-leading 176-layer NAND and 1α (1-alpha) DRAM technology, as well as the industry’s first Universal Flash Storage (UFS) 3.1 solution for automotive applications. The new portfolio additions deliver on the company’s vision of accelerating data-driven insights through innovations in memory and storage that enable new capabilities from the data center to the intelligent edge. Micron President and CEO Sanjay Mehrotra made the announcements during a Computex keynote, in which he shared a sweeping vision for computing innovation and the central role memory and storage play in enabling enterprises to seize the full potential of the data economy.
Micron announced volume delivery of its first PCIe® Gen4 solid-state drives (SSDs) built with the world’s first 176-layer NAND. The company is also shipping the world’s first 1α node-based LPDDR4x DRAM this month. LPDDR4x is the latest JEDEC specification for fourth-generation low-power DRAM with improved input/output voltage for substantially lower power, making it ideal for mobile computing devices. Together, these latest releases reinforce Micron’s leadership position in both DRAM and NAND technology, established this year.
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