Samsung Starts Producing 3.2-Terabyte NVMe SSD Based On 3D V-NAND
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass producing 3.2-terabyte (TB) NVMe PCIe solid state drives (SSDs) based on its 3D V-NAND (Vertical NAND) flash memory technology, for use in high-end enterprise server systems.
The new NVMe PCIe SSD, SM1715, utilizes Samsung’s proprietary 3D V-NAND in an HHHL (half-height, half-length) card-type form factor, to offer 3.2TB of storage capacity -- doubling Samsung’s previous highest NVMe SSD density of 1.6TB.
“Beginning with mass production of this new V-NAND-based NVMe SSD, which delivers the highest level of performance and density available today, we expect to greatly expand the high-density SSD market,” said Jeeho Baek, Vice President, Memory Marketing, Samsung Electronics. “Samsung plans to actively introduce V-NAND-based SSDs with even higher performance, density and reliability in the future, to keep its global customers ahead of their competition.”