CORSAIR, a world leader in enthusiast memory, high-performance gaming hardware, and PC components, today announced the launch of the CORSAIR Neutron NX500 NVMe PCIe SSD AIC. The NX500 boasts performance up to five times faster than traditional SATA 3.0 SSDs, connecting to your system via an available PCI Express 3.0 x4 slot. Achieving up to 3,000MB/sec sequential read and 2,400 MB/sec sequential write speeds, or 300K/270K IOPS random read/write, the NX500 is the fastest SSD CORSAIR has ever produced.

Available in 400GB, 800GB and 1,600GB capacities, and clad in a custom-designed high-surface-area heat sink, the NX500 is engineered for speed and all-but eliminates performance thermal throttling thanks to temperatures up to 20°C lower than m.2 PCI Express NVMe SSDs. Whether you’re editing video, transferring files or loading the latest games, the NX500 has the cooling, style and performance and to make sure both you and your system never fall behind.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched the industrial-grade IM2S3338 M.2 2280 and IM2S3334 M.2 2242 SATA 6Gbps solid state drives. Both utilize the compact M.2 form factor for an easy fit in various installations and transfer data at up to 560MB/s read and 525MB/s write. They use durable and long-lasting 3D NAND, MLC/TLC for the IM2S3334 and TLC on the IM2S3338. The two drives are carefully tested for survivability in extreme temperatures and humidity as well as resistance to shocks and vibration. ADATA integrates LDPC error correction to promote data integrity plus DRAM and SLC caching to help sustain peak performance on both model ranges.

Ever-expanding industrial storage portfolio
ADATA continues to place an emphasis on serving industrial and commercial applications such as manufacturing, surveillance, retail, transportation, and medical care. The IM2S3338 and IM2S3334 provide additional options, this time in the M.2 form factor. The IM2S3338 uses 3D TLC in capacities from 128GB to 1TB. It delivers 560MB/s read and 520MB/s write. The IM2S3334 carries highly durable 3D MLC NAND in 120GB to 512GB, and 3D TLC in 128GB to 512GB, and runs at up to 560MB/s read and 525MB/s write. Users therefore get a comprehensive range of models to choose from based on required capacity and planned budget.

Samsung Electronics, the world leader in advanced memory technology, has announced new V-NAND (Vertical NAND) memory solutions and technology that will address the pressing requirements of next-generation data processing and storage systems. With the rapid increase of data-intensive applications across many industries using artificial intelligence and Internet of Things (IoT) technologies, the role of flash memory has become extremely critical in accelerating the speed at which information can be extracted for real-time analysis.

At the inaugural Samsung Tech Day and this year’s Flash Memory Summit, Samsung is showcasing solutions to address next-generation data processing challenges centered around the company’s latest V-NAND technology and an array of solid state drives (SSDs). These solutions will be at the forefront of enabling today’s most data-intensive tasks such as high-performance computing, machine learning, real-time analytics and parallel computing.

Micron Technology, Inc.today introduced Micron 9200 Series of NVMe™ SSDs, the company's latest flagship performance solid-state storage family. The innovative architecture and industry leading performance of Micron 9200 SSDs allows organizations to access data faster and stay one step ahead of the growing diversity of business-critical workloads and surging data demands.

The new Micron 9200 SSD combines the cost-effective capacity of 3D NAND with the proven throughput and response time of the NVM Express (NVMe) protocol. Built from the ground up to remove legacy layers of hard drive interfaces, Micron's second generation of NVMe drives unleashes the speed of solid state nonvolatile memory to maximize data center efficiency for optimal total cost of ownership (TCO).

Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, announces the new SG6 series, the latest Toshiba client SSD to feature 64-layer, 3-bit-per-cell TLC (triple-level cell) BiCS FLASH™ to deliver better transfer speeds and power efficiency. This family of SSDs is designed for mainstream desktops and notebooks, consumer upgrades, as well as applications needing data security.

With increased performance over the prior generation, SG6 features the latest SATA technology to deliver up to 550 MB/s sequential read and 535 MB/s sequential write, and up to 100,000 and 85,000 random read/write IOPS delivering enhanced application performance. Furthermore, compared to its previous generation, active power consumption was decreased by up to 40% enabling increased battery life for mobile computing.

Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, today unveiled the development of two new flagship enterprise solid state drive (SSD) solutions, the TMC PM5 12Gbit/s SAS series and the CM5 NVM Express® (NVMe™) series. Development is expected to be completed in the fourth quarter. Both product lines are built with TMC’s latest 64 layer, 3-bit-per-cell enterprise-class TLC (triple-level cell) BiCS FLASH, making it possible for today’s demanding storage environments to expand the use of flash with cost-optimized 3D flash memory. With all-new, advanced features, the innovative CM5 and PM5 series raise the bar in performance capabilities and create new opportunities for businesses to leverage the power of flash storage.

Offering up to 30.72TB in a 2.5-inch form factor, the TMC PM5 series introduces a full range of endurance and capacity SAS SSDs enabling data centers to effectively address big data demands while streamlining storage deployments. With the industry’s first MultiLink SAS™ architecture, the PM5 series is able to deliver the fastest performance the market has seen from a SAS-based SSD with up to 3,350 MB/s of sequential read and 2,720 MB/s of sequential write in MultiLink mode and up to 400,000 random read IOPS in narrow or MultiLink mode. The PM5 series’ 4-port MultiLink design is an additional technology to achieve high performance, close to PCI EXPRESS® (PCIe®) SSDs, enabling legacy infrastructures to increase productivity without having to be re-architected from the ground up. Furthermore, PM5 SSDs support multi-stream write technology, a feature that intelligently manages and groups data types to minimize write amplification and minimize garbage collection, translating into reduced latency, improved endurance, increased performance and Quality of Service (QoS).

Toshiba Memory Corporation, the world leader in memory solutions, today announced the launch of the BG3 series, a new line-up of single package NVM Express (NVMe) client SSDs integrating Toshiba Memory Corporation’s cutting-edge 64-layer, 3-bit-per-cell (TLC) BiCS FLASH and controller in a ball grid array (BGA) package. Sample shipments to PC OEM customers start today in limited quantities, and Toshiba Memory Corporation will gradually increase shipments from the fourth calendar quarter of this year.

The new BG3 series SSDs utilizes the features of PCI EXPRESS (PCIe) Gen3 x 2lanes and NVMeTM Revision 1.2.1 architecture. They are also equipped with a Host Memory Buffer (HMB) feature, which uses the host memory to substitute for DRAMs, saving power and space, and supporting developers of compact devices who must achieve a balance between high performance and low power consumption. Also, the combined benefits of SLC cache features, improved flash management and flash memory performance add up to deliver performance of up to 1520MB/s sequential read and 840MB/s sequential write.