Transcend Information Inc. (Transcend), a global leader in industrial memory storage, has unveiled the all-new MTE560P M.2 SSD featuring an array of next-gen features. This innovative drive utilizes the PCIe Gen 4x4 high-speed interface, coupled with high-quality 112-layer 3D NAND Flash technology, and a wide temperature range. With the added incorporation of SLC Mode, Power Loss Protection (PLP), and TCG Opal encryption, the MTE560P is poised to help foster the growth and long-term resilience of smart trends across various markets including industrial automation, transportation, and 24/7 surveillance.

SLC Mode & PLP: Combining Durability, Sustained High Speeds, and Storage Integrity
Transcend's MTE560P is a solid-state drive that combines SLC Mode and PLP. Through SLC Mode technology, TLC flash can be simulated as SLC, enhancing flash endurance by up to 100K P/E cycles, while achieving sustained write speed performance. On the other hand, Power Loss Protection (PLP) ensures that the SSD prevents data corruption when the system encounters unstable power supply or sudden power loss/failure, thereby enhancing data storage integrity.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

“We are excited to deliver the industry’s first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. “Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation.”

With the industry's smallest cell size and thinnest mold, Samsung improved the bit density of the 9th-generation V-NAND by about 50% compared to the 8th-generation V-NAND. New innovations such as cell interference avoidance and cell life extension have been applied to enhance product quality and reliability, while eliminating dummy channel holes has significantly reduced the planar area of the memory cells.

Renowned global memory brand Team Group Inc. is committed to providing consumers with diverse and optimal storage solutions. Today, it proudly unveils the TEAMGROUP MP44Q M.2 PCIe 4.0 Solid State Drive, featuring the latest 3D QLC NAND technology, combining cutting-edge technology with the trend of demanding high storage capacity to meet daily system and file storage needs.

TEAMGROUP MP44Q M.2 PCIe 4.0 SSD utilizes the latest 3D QLC NAND, offering capacities of up to 4TB. With the PCIe Gen4 x4 interface and SLC Caching technology, it achieves maximum sequential read and write speeds of up to 7,400 MB/s and 6,500 MB/s, respectively. The MP44Q SSD operates with low power consumption, catering to all document processing and storage applications, significantly enhancing work efficiency. Paired with TEAMGROUP’s exclusively patented graphene heat dissipation sticker, whose thickness is less than 1 mm, eliminating the potential for mechanical interference in any assembly, coupled with the native heat sink of the motherboard, such an arrangement effectively addresses the heat generated by high performance, extending the SSD's lifespan. Additionally, it supports TEAMGROUP’s exclusively patented SSD intelligent monitoring software, S.M.A.R.T., allowing for quick and easy configuration and testing, effortlessly monitoring the quality and performance of the SSD. The product also provides the latest QLC high-speed Gen4 x4 SSD to cater to various storage needs for both life and work.

Micron Technology, Inc., today demonstrated its continued NAND technology leadership by announcing that its 232-layer QLC NAND is now in mass production and shipping in select Crucial SSDs, in volume production to enterprise storage customers and sampling to OEM PC manufacturers in the Micron 2500 NMVe SSD.

Micron 232-layer QLC NAND delivers unparalleled performance for use cases across mobile, client, edge and data center storage by leveraging these important capabilities:

• Industry-leading bit-density, up to 28% more compact than leading competitors' latest products
• Industry-leading NAND I/O speeds of 2400 MT/s,1 a 50% improvement over the prior generation2
• 24% better read performance over the prior generation
• 31% better programming performance over the prior generation

“Micron’s 232-layer QLC NAND is a key enabler of our high-capacity DirectFlash® Module,” said Bill Cerreta, general manager of Hyperscale at Pure Storage®. “Thanks to Micron's NAND innovation, Pure Storage can take one more step on its quest to replace all HDDs in the data center by 2028.”

Samsung Electronics America, the leader in advanced memory technology, today announced a new 512GB capacity for its BAR Plus and FIT Plus USB 3.2 Gen1 Flash Drives. The newest drives introduce more storage capacity to the lineup in the same sleek designs, perfect for storing your favorite tunes, irreplaceable photos/videos, and important work or school documents. These USB flash drives help you back up your data and save time thanks to their high capacity, quick speeds, wide device compatibility, and reliability.

“We recognize that professionals across the U.S. have more data storage needs than ever. That’s why we’re introducing a new size option within our cutting-edge BAR Plus and FIT Plus USB Flash Drive line-up, ensuring there is a storage solution for everyone,” said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. “The drives are also intentionally designed to fit your personal style – whether you prefer something sleek and modern or unassuming and traditional, you can always be plugged in.”

CDRLabs kicks off the week with a review of Crucial's second-generation Gen5 NVMe SSD, the T705. Designed for enthusiasts, gamers, creators, and professionals who need next generation storage, this M.2 form factor drive is powered by Phison's PS5026-E26 controller and is available with up to 4TB of Micron's industry-leading 232-layer 3D TLC NAND flash. The T705 is also available with or without a custom-designed premium heatsink and is equipped with an ultra-fast PCIe Gen 5.0 x4 NVMe 2.0 interface to deliver up to 14,500 MB/s read and 12,700 MB/s write speeds.

ProGrade Digital, Inc., founded with a mission to provide the highest quality professional grade digital memory cards and workflow solutions, announces its new line of 4th generation CFexpress™ Type B Iridium memory cards in a 400GB, 800GB, and 1.6TB capacity.

This new line features the same industry-leading quality as the ProGrade current 4th generation 512GB, 1TB, and 2TB capacity Gold line of cards, and leverages PCIe Gen 4 interconnect with NVMe 1.4c host controller interface with the addition of a VPG400 rating. The ProGrade Digital CFexpress Iridium cards are fully compliant with the CFexpress 4.0 specification, and provide a read speed of up to 3,550MB/s, burst write speed of up to 3,000MB/s, and sustained write speeds of up to 850MB/s and 1,500MB/s respectively – ideally suited for the highest-resolution cinema-grade video capture applications. The VPG400 rating of the CFexpress Type B Iridium memory cards makes them compatible with cinema cameras like the Sony Burano.