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- Flash Memory
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba’s 2D NAND Flash memory.
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- Flash Memory
Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its new semiconductor fabrication line in Pyeongtaek, South Korea, has begun mass production and shipping its first product to customers. The new facility will focus on the production of Samsung’s fourth-generation V-NAND (64 layers), adding to the company’s leading capacity for cutting-edge memory products.
“With the dedication and support of our employees, customers and partners, our new Pyeongtaek campus represents a new chapter in Samsung’s semiconductor operations,” said Oh-Hyun Kwon, Vice Chairman and Chief Executive Officer of Samsung Electronics.
With two years of construction since it broke ground in May, 2015, the fabrication line at the Pyeongtaek campus is currently the largest single Fab in the industry.
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- Hard Disks
ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the HD710 Pro durable external hard drive alongside an addition to the best-selling HD650 range. The HD710 Pro improves on its HD710 predecessor by exceeding IP68 dust and water proofing plus military-grade shock resistance. It enhances the safeguarding of stored data against accidents, damage, and the rigors of active lifestyles, and is available in four colors. The HD710 Pro offers up to 4TB capacity. The refreshed HD650 arrives in a stylish light blue over black color scheme, also providing 4TB capacity – a new milestone for unpowered USB external hard drives. Together, these two new USB 3.1 models bolster the ADATA external hard drive portfolio, giving consumers more choice.
HD710 Pro: more durable and bigger than before
The original HD710 proved quite successful for ADATA on Windows, Linux, and Mac OS. The HD710 Pro improves on it with enhanced dust and water proofing that boosts its durability for use in harsh environments and the outdoors. It exceeds IEC IP68 requirements, being completely dust-tight and able to withstand up to 60-minute submersion in 2 meters of water. It also meets and passes MIL-STD 810G 516.6 requirements, surviving shocks and impacts associated with drops from up to 1.5 meters. The HD710 Pro uses a custom triple-layered protective build and implements G-Shock sensor technology that stops and restarts drive activity when shocks or vibrations are detected to prevent data corruption. The drive features an ergonomic USB port cover for effortless open/close, and a useful wraparound groove for storing its USB cable. Red, yellow, and blue variants are available in 1TB/2TB, while the black version goes up to 3TB/4TB.
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- Flash Memory
Western Digital Corp., a global data storage technology and solutions leader, today announced that it has successfully developed its next-generation 3D NAND technology, BiCS4, with 96 layers of vertical storage capability. Sampling to OEM customers is expected to commence in the second half of calendar year 2017 and initial production output is expected in calendar year 2018. BiCS4, which was developed jointly with Western Digital's technology and manufacturing partner Toshiba Corporation, will be initially deployed in a 256-gigabit chip and will subsequently ship in a range of capacities, including a terabit on a single chip.
"Our successful development of the industry's first 96-layer 3D NAND technology demonstrates Western Digital's continued leadership in NAND flash and solid execution to our technology roadmap," said Dr. Siva Sivaram, executive vice president of memory technology at Western Digital. "BiCS4 will be available in 3-bits-per-cell and 4-bits-per-cell architectures, and it contains technology and manufacturing innovations to provide the highest 3D NAND storage capacity, performance and reliability at an attractive cost for our customers. Western Digital's 3D NAND portfolio is designed to address the full range of end markets spanning consumer, mobile, computing and data center."
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- Hard Disks
In addition to a new metallic look, the drive offers intuitive WD Discovery™ software to help consumers easily back up photos, videos and important documents shared and created across multiple social networks, cloud services and devices. The My Passport Ultra drive is the ideal storage solution for consumers who want to consolidate and preserve all aspects of their digital lives.
Today's consumers have multiple social media accounts, and according to Parks Associates research, use an average of three public cloud services per household like Dropbox, Google Drive™ or Microsoft OneDrive, all of which increases their digital footprint. With so many ways to create, share and store content, there is a growing need for solutions that enable consumers to consolidate all of this crucial data. The My Passport Ultra drive with WD Discovery software makes it easier than ever to back up content from popular social media platforms like Facebook and Instagram. With a few simple steps, users can download all of their content, including tagged photos and videos from Facebook, onto the drive. WD Discovery software is also an excellent way for users to keep a local copy of files they've stored on their favorite public cloud services.
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- Flash Memory
Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.
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- Flash Memory
Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.
Going forward, Toshiba Memory Corporation will apply its new 96-layer process technology to larger capacity products, such as 512 gigabit (64 gigabytes) and 4-bit-per-cell (quadruple-level cell, QLC) technology, in the near future.
The innovative 96-layer stacking process combines with advanced circuit and manufacturing process technology to achieve a capacity increase of approximately 40% per unit chip size over the 64-layer stacking process. It reduces the cost per bit, and increases the manufacturability of memory capacity per silicon wafer.
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- Flash Memory
MacSales.com, a leading zero emissions Mac and PC technology company, announced today the availability of the new OWC 2.0TB Aura Pro Solid State Drive for mid-2012 to early 2013 Apple MacBook Pro with Retina display. One of the fastest internal SSDs available on the market, the Aura Pro SSD is also compatible with 2010-2012 MacBook Air.
Aura Pro SSD Also Available with Envoy Pro Enclosure
The Aura Pro 2.0TB SSD upgrade frees up and boosts capacity on the internal hard drive – at over five years of MacBook Pro ownership. The Aura Pro drive is also available as a kit with an Envoy Pro enclosure to immediately reuse an Apple internal hard drive, creating a new external USB 3.1 Gen1 portable drive.
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- Flash Memory
Beijing Memblaze Technology Co., Ltd. today announced the launch of its next generation of PCIe NVMe SSD products, PBlaze 5 700 and 900 series, for hyper-scale data center deployment and for enterprise mission critical applications, respectively. PBlaze5 utilizes high-quality 3D Enterprise-level TLC NAND and supports NVMe 1.2a, with SSD user capacities up to 11TB.
PBlaze5 comes in 2.5-inch U.2 and HHHL add-in card form factors and provides high performance 6GB/s read bandwidth (128KB) and >1M IOPS random read (4KB), with typical read write latency of 90/15μs. PBlaze5 U.2 interface is hot plugable, hot removable and hot swapable, effectively reducing data center operation complexity.
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NVM Express, Inc., the organization that developed the industry standard NVM Express (NVMe) specification for accessing solid-state drives (SSDs) on a PCI Express (PCIe®) bus as well as across Fabrics, today announced the completion and release of its NVMe 1.3 specification. NVM Express has delivered on its commitment to Enterprise, Cloud, and Client customers by adding capabilities that meet the unique needs of each of these market segments, including Virtualization and Streams. The reach of the interface has expanded its support for the Mobile sector by adding the Boot Partitions feature, which enables bootstrapping of an SSD in a low resource environment. These features have been added while maintaining low latency and high performance – making an NVMe device ready to take advantage of next generation bus speeds, including PCIe 4.0. The NVM Express 1.3 specification is available now for download.
“NVM Express is taking the solid-state drive ‘world by storm,’ accelerating on a trajectory to go from the first units shipped in 2H’2014 to become the highest volume SSD interface in 1H’2018 based on gigabytes shipped – surpassing both SATA and SAS,” said Amber Huffman, president of NVM Express. “As demonstrated by revision 1.3, the NVM Express working group is laser-focused on the specification’s continued evolution to address the dynamic workloads and scenarios that NVMe serves.”
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