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Today Toshiba Memory America, Inc., the U.S.-based subsidiary of Toshiba Memory Corporation, has introduced a new lineup of solid state drives (SSDs) that are based on its 96-layer, BiCS FLASH™ 3D flash memory. The first SSD to use this breakthrough technology, the new XG6 series is targeted to the client PC, high-performance mobile, embedded, and gaming segments – as well as data center environments for boot drives in servers, caching and logging, and commodity storage.
As the inventor of flash memory and the first to introduce the concept of 3D flash memory, Toshiba Memory is driven to continually push the boundaries of what is possible – and move the technology forward. Its 3-bit-per-cell (triple-level cell, TLC) BiCS FLASH technology improves the performance, density and efficiency of SSDs. And its innovative 96-layer stacking process combines with advanced circuit and manufacturing technology to achieve a capacity increase of approximately 40 percent per unit chip size over 64-layer 3D flash memory.
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Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced the development of a prototype sample of 96-layer BiCS FLASH, its proprietary three-dimensional (3D) flash memory, with 4-bit-per-cell (quad level cell, QLC) technology. With this milestone achievement, Toshiba demonstrates its technology leadership in the storage market by delivering technology that boosts single-chip memory capacity to the highest level yet achieved.
Toshiba’s new QLC BiCS FLASH significantly expands capacity by pushing the bit count for data per memory cell from three to four. The new product achieves the industry's maximum capacity of 1.33 terabits for a single chip, and a 16-die stacked architecture in a single package realizes an unparalleled capacity of 2.66 terabytes.
The number of applications needing huge amounts of storage continues to grow, fed by the enormous volumes of data being generated that need to be accessed and analyzed in real time. Social media, SSDs, edge computing, enterprise applications and the rapidly expanding data center storage market are all areas in which larger capacity storage is required – to name just a few. With the introduction of 96-layer QLC technology, Toshiba Memory enables the development of products that keep pace with the fast-moving storage market.
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Western Digital Corp. today announced successful development of its second-generation, four-bits-per-cell architecture for 3D NAND. Implemented for the company’s 96-layer BiCS4 device, the QLC technology delivers the industry’s highest 3D NAND storage capacity of 1.33 terabits (Tb) in a single chip. BiCS4 was developed at the joint venture flash manufacturing facility in Yokkaichi, Japan with our partner Toshiba Memory Corporation. It is sampling now and volume shipments are expected to commence this calendar year beginning with consumer products marketed under the SanDisk brand. The company expects to deploy BiCS4 in a wide variety of applications from retail to enterprise SSDs.
“Leveraging Western Digital’s silicon processing, device engineering and system integration capabilities, the QLC technology allows 16 distinct levels to be sensed and utilized for storing data,” said Dr. Siva Sivaram, executive vice president, Silicon Technology and Manufacturing at Western Digital. “BiCS4 QLC is our second generation four-bits-per-cell device, and it builds on the learnings from our QLC implementation in 64-layer BiCS3. With the best intrinsic cost structure of any NAND product, BiCS4 underscores our strengths in developing flash innovations that allow our customers’ data to thrive across retail, mobile, embedded, client and enterprise environments. We expect the four-bits-per-cell technology will find mainstream use in all these applications.”
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry’s first use of the ‘Toggle DDR 4.0’ interface, the speed for transmitting data between storage and memory over Samsung’s new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.
The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.
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The world’s leading memory brand TEAMGROUP today announced the release of Dash Card, a memory card specially made for dashboard cameras. It is designed to offer long term and stable storage performance and high compatibility with dashboard cameras on the market. Having passed rigorous quality tests and compatibility verifications, it is proven to be dashcam’s best partner for memory storage.
TEAMGROUP’s Dash Card is a memory card which carefully designed for dashboard cameras and video surveillance. With UHS-I U1(Class10) specification, it allows dashboard camera to record Full HD 1080p (30fps) high quality video without any lag or unsmooth motions. It can record driving images or crucial moments clearly and provided as evidence to clarify the cause and responsibility of the accident. Dash Card has passed compatibility verifications with many major dashboard cameras on the market, and it was also tested respectively for functions such as video record, photo, etc. It has high compatibility, long term and stable storage performance that can completely record the trip and crucial images. Driving safety of consumers can be guaranteed; moreover, the rights and interest can also be protected in crucial moments. It is the most powerful backing when it comes to record driving.
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ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash products, today launched its new enterprise-class SR2000 series solid state drives (SSD), which include the SR2000SP U.2 PCIe and SR2000CP PCIe HHHL AIC SSDs. These SSDs are built on 3D eTLC NAND Flash technology to offer superb transfer rates, higher capacities, and added endurance. In addition, they come with value-added scalable over-provisioning (OP) software to give IT managers the flexibility to set OP capacity.
ADATA SR2000SP U.2 PCIe SSD
ADATA SR2000SP U.2 (2.5”) solid state drives implement 3D enterprise TLC NAND Flash technology for superb transfer rates, including random read and write speeds of up to 830,000 and 140,000 IOPS respectively, and sequential read and write speeds of up to 3,500MB per second. The SSDs offer excellent power efficiency and compatibility across diverse storage applications that require security, convenience, and performance. To meet the ever-growing data volumes being handled in the context of enterprise servers, hyperscale computing, data centers, big data analytics, and others applications, the SR2000SP come with up to 11TB of capacity. For added versatility, the SR2000SP is accompanied with a scalable over-provisioning (OP) software that gives IT managers the flexibility to set OP capacity for enhancing SSD performance and endurance. The SSDs also support hot swapping to cause minimal impact to system operations, and feature TRIM command support in Windows. Purpose-made for enterprise applications, the SSDs undergo rigorous quality controls to ensure excellent reliability and durability – providing customers consistent performance and great value for money.
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Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry’s first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.
The Environmental Product Declaration is a national certification system in Korea which recognizes a product’s performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.
In terms of per capacity (gigabit), the carbon emission of the 512Gb 3-bit V-NAND has been reduced to less than half of that of the 10-nanometer (nm)-class 64Gb V-NAND that was certified last year.
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The SD Association announced today SD Express which adds the popular PCI Express and NVMe interfaces to the legacy SD interface. The PCIe interface delivering a 985 megabytes per second (MB/s) maximum data transfer rate and the NVMe upper layer protocol enables advanced memory access mechanism, enabling a new world of opportunities for the popular SD memory card. In addition, the maximum storage capacity in SD memory cards grows from 2TB with SDXC to 128 TB with the new SD Ultra Capacity (SDUC) card. These innovations maintain the SDA’s commitment to backward compatibility and are part of the new SD 7.0 specification.
“SD Express’ use of popular PCIe and NVMe interfaces to deliver faster transfer speeds is a savvy choice since both protocols are widely used in the industry today and creates a compelling choice for devices of all types,” said Mats Larsson, Senior Market Analyst at Futuresource. “The SD Association has a robust ecosystem with a strong history of integrating SD innovations and has earned the trust of consumers around the world.”
SD Express keeps pace with growing performance levels of mobile and client computing, imaging and automotive as they adopt faster communication and embedded storage protocols designed to make processing data faster.
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BIOSTAR unveils its newest solid-state drive featuring 3D TLC NAND flash - the M500 M.2 PCIe NVMe SSD. The BIOSTAR M500 uses the compact M.2 2280 form factor that is compatible with latest-generation motherboards, laptops, and mini PCs. It supports the ultra-speed PCI-express Gen3x2 interface which offers builders greater compatibility. The BIOSTAR M500 SSD is NVMe (Non-Volatile Memory Express) 1.2 compliant delivering high-performance speeds of up to 1700MB/s sequential read and 1100MB/s sequential write and random read/write IOPS of up to 200K/180K.
Smart Temperature Display
The BIOSTAR M500 Series SSD features visible smart LED indicators on its heatsink cover for temperature and data activity. The LED Smart Temperature display delivers real-time temperature status of the solid-state drive in three different levels: green for temperature below 50°C, yellow for temperature between 50°C to 65°C, and red for temperature above 65°C. The LED Data Transmission display data transmission status: blue light for access status and a green light for PCIe transmission mode (Gen 2 / Gen 3).
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Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched the industry’s highest capacity NVMe solid state drive (SSD) based on the incredibly small Next-generation Small Form Factor (NGSFF) – an eight-terabyte (TB) NF1 SSD. The new 8TB NVMe NF1 SSD has been optimized for data-intensive analytics and virtualization applications in next-generation data centers and enterprise server systems.
“By introducing the first NF1 NVMe SSD, Samsung is taking the investment efficiency in data centers to new heights,” said Sewon Chun, senior vice president of Memory Marketing at Samsung Electronics. “We will continue to lead the trend toward enabling ultra-high density data centers and enterprise systems by delivering storage solutions with unparalleled performance and density levels.”
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